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mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw7ic2240n wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 mhz. this multi - stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats including td - scdma. typical performance ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 90 ma, i dq2 = 420 ma, p out = 4 watts avg., full frequency band (2110 - 2170 mhz), channel bandwidth = 3.84 mhz. par = 7.5 db @ 0.01% probability on ccdf. power gain ? 30 db power added efficiency ? 14% acpr @ 5 mhz offset ? - 50 dbc in 3.84 mhz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 40 watts cw output power ? p out @ 1 db compression point = 40 watts cw ? stable into a 5:1 vswr. all spurs below - 60 dbc @ 100 mw to 10 watts cw p out . features ? characterized with series equivalent large - signal impedance parameters and common source scattering parameters ? on - chip matching (50 ohm input, dc blocked, >3 ohm output) ? integrated quiescent current temperature compensation with enable/ disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. figure 1. functional block diagram quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 (top view) gnd nc rf in v gs1 gnd v ds1 rf out /v ds2 gnd v gs2 v ds1 gnd 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 nc nc nc nc nc figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes - an1977 or an1987. document number: mw7ic2240n rev. 0, 11/2007 freescale semiconductor technical data mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 2110 - 2170 mhz, 4 w avg., 28 v single w - cdma rf ldmos wideband integrated power amplifiers case 1886 - 01 to - 270 wb - 16 plastic mw7ic2240nr1 case 1887 - 01 to - 270 wb - 16 gull plastic mw7ic2240gnr1 case 1329 - 09 to - 272 wb - 16 plastic mw7ic2240nbr1 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +5 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case 4 w avg. (p out = 3.95 w avg., case temperature = 68 c) stage 1, 28 vdc, i dq1 = 90 ma stage 2, 28 vdc, i dq2 = 420 ma 40 w avg. (p out = 39.4 w avg., case temperature = 80 c) stage 1, 28 vdc, i dq1 = 90 ma stage 2, 28 vdc, i dq2 = 420 ma r jc 3.9 1.3 3.2 1.2 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) ii (minimum) 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 3 rf device data freescale semiconductor table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 23 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 28 vdc, i d = 90 madc) v gs(q) ? 2.9 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i d = 90 madc, measured in functional test) v gg(q) 9.5 13 16.5 vdc stage 1 ? dynamic characteristics (1) input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 50 ? pf stage 2 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 28 vdc, i d = 420 madc) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i d = 420 madc, measured in functional test) v gg(q) 7 9.8 12.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) 0.2 0.39 1.2 vdc stage 2 ? dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.67 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 205 ? pf 1. part internally matched both on input and output. (continued)
4 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale wideband 2110 - 2170 mhz test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 90 ma, i dq2 = 420 ma, p out = 4 w avg., f1 = 2112.5 mhz and f2 = 2167.5 mhz, single-carrier w-cdma, 3gpp test model 1, 64 dpch, 50% clipping, par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 28 30 33 db power added efficiency pae 12 14 ? % adjacent channel power ratio acpr ? -50 -46 dbc input return loss irl ? -16 -12 db typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 90 ma, i dq2 = 420 ma, 2110 - 2170 mhz p out @ 1 db compression point, cw p1db ? 40 ? w video bandwidth @ 40 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 10 ? mhz gain flatness in 60 mhz bandwidth @ p out = 4 w avg. g f ? 0.1 ? db average deviation from linear phase in 60 mhz bandwidth @ p out = 40 w cw ? 1.08 ? average group delay @ p out = 40 w cw, f = 2140 mhz delay ? 1.98 ? ns part - to - part insertion phase variation @ p out = 40 w cw, f = 2140 mhz, six sigma window ? ? 18.3 ? gain variation over temperature (-30 c to +85 c) g ? 0.05 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.004 ? dbm/ c
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 5 rf device data freescale semiconductor z8 0.204 x 0.083 microstrip z9 0.273 x 0.083 microstrip z10 0.176 x 0.083 microstrip z11 0.364 x 0.083 microstrip z12, z13 0.564 x 0.083 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22 , 0.030 , r = 2.5 z1 2.197 x 0.083 microstrip z2 0.016 x 0.083 x 0.055 taper z3 0.106 x 0.055 microstrip z4 0.409 x 0.322 microstrip z5 0.161 x 0.322 microstrip z6 0.254 x 0.322 microstrip z7 0.388 x 0.123 microstrip figure 3. mw7ic2240nr1(gnr1)(nbr1) test circuit schematic r1 z2 rf input v gg1 z4 z5 rf output c18 c10 v dd2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc dut z3 c2 c6 v dd1 z12 quiescent current temperature compensation z1 nc z13 z6 z7 z11 c8 c9 c17 c4 c1 r2 v gg2 c3 nc nc c5 c7 z8 z10 z9 c16 c12 c14 c19 c20 c23 + c11 c13 c15 c21 c22 table 6. mw7ic2240nr1(gnr1)(nbr1) test circuit component designations and values part description part number manufacturer c1 8.2 pf chip capacitor atc100b8r2bt250xt atc c2, c16 0.4 pf chip capacitors atc700b0r4bt500xt atc c3, c14, c15 4.7 f, 50 v chip capacitors grm31cr71h475ka12l murata c4, c5, c19, c20, c21, c22 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c6, c7, c10, c11 5.6 pf chip capacitors atc100b5r6bt250xt atc c8, c9 0.3 pf chip capacitors atc700b0r3bt500xt atc c12, c13 0.1 f chip capacitors c1206c104k5rac kemet c17 0.6 pf chip capacitor ATC100B0R6BT250XT atc c18 6.8 pf chip capacitor atc100b6r8bt250xt atc c23 470 f, 63 v electrolytic capacitor 477kxm063m illinois r1, r2 10 k , 1/4 w chip resistors crcw12061001fkea vishay
6 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 figure 4. mw7ic2240nr1(gnr1)(nbr1) test circuit component layout mw7ic2240n rev. 2a cut out area c4 c6 c7 c2 c3 r2 c1 r1 v gg1 c5 c21 c22 c11 c13 c15 c17 c18 c16 c19 c20 c10 c12 c14 c23 c8 c9
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 7 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 30 g ps 32 16 31.8 15 14 13 figure 5. power gain, input return loss, power added efficiency and acpr versus frequency @ p out = 4 watts avg. ?4 ?24 ?47 ?16 ?20 pae acpr (dbc) 2060 irl 2080 2100 2120 2140 2160 2180 2200 2220 31.6 31.4 31.2 31 30.8 30.6 30.4 30.2 ?48 ?49 ?50 ?51 ?52 ?53 ?12 ?8 pae, power added efficiency (%) acpr?u acpr?l single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability (ccdf) v dd = 28 vdc, p out = 4 w (avg.) i dq1 = 90 ma, i dq2 = 420 ma g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 29.6 g ps 31.6 26 31.4 25 24 23 figure 6. power gain, input return loss, power added efficiency and acpr versus frequency @ p out = 10 watts avg. ?4 ?24 ?38 ?16 ?20 pae acpr (dbc) 2060 irl 2080 2100 2120 2140 2160 2180 2200 2220 31.2 31 30.8 30.6 30.4 30.2 30 29.8 ?39 ?40 ?41 ?42 ?43 ?44 ?12 ?8 pae, power added efficiency (%) acpr?u acpr?l p out , output power (watts) pep 10 32 1 i dq2 = 630 ma 30 28 26 figure 7. two - tone power gain versus output power @ i dq1 = 90 ma g ps , power gain (db) 31 27 29 315 ma 100 210 ma p out , output power (watts) pep 10 34 1 i dq1 = 135 ma 32 30 28 figure 8. two - tone power gain versus output power @ i dq2 = 420 ma g ps , power gain (db) 33 27 29 31 112.5 ma 100 26 67.5 ma 45 ma v dd = 28 vdc, p out = 10 w (avg.) i dq1 = 90 ma, i dq2 = 420 ma single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability (ccdf) 33 420 ma 525 ma v dd = 28 vdc, i dq1 = 90 ma f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 90 ma v dd = 28 vdc, i dq2 = 420 ma f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing
8 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 typical characteristics figure 9. third order intermodulation distortion versus output power @ i dq1 = 90 ma ?50 ?10 i dq2 = 210 ma p out , output power (watts) pep 315 ma 10 ?20 ?30 ?40 ?60 1 intermodulation distortion (dbc) imd , third order v dd = 28 vdc, i dq1 = 90 ma f1 = 2135 mhz, f2 = 2145 mhz two?tone measurements, 10 mhz tone spacing 100 figure 10. third order intermodulation distortion versus output power @ i dq2 = 420 ma ?50 ?10 i dq1 = 45 ma p out , output power (watts) pep 67.5 ma 10 ?20 ?30 ?40 ?60 1 intermodulation distortion (dbc) imd, third order v dd = 28 vdc, i dq2 = 420 ma f1 = 2135 mhz, f2 = 2145 mhz two?tone measurements, 10 mhz tone spacing 100 7th order 5th order 3rd order p out , output power (watts) pep figure 11. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) v dd = 28 vdc, i dq1 = 90 ma i dq2 = 420 ma, f1 = 2135 mhz, f2 = 2145 mhz two?tone measurements, 10 mhz tone spacing ?60 10 ?20 ?40 100 1 ?10 ?30 ?50 1100 ?20 ?30 ?40 ?50 two?tone spacing (mhz) figure 12. intermodulation distortion products versus tone spacing imd, intermodulation distortion (dbc) 10 v dd = 28 vdc, p out = 40 w (pep), i dq1 = 90 ma i dq2 = 420 ma, two?tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im7?u im5?u im5?l im3?l im7?l im3?u ?10 ?60 22 54 p in , input power (dbm) 49 47 45 44 11 12 actual ideal p1db = 46.23 dbm (42 w) 48 46 13 14 figure 13. pulsed cw output power versus input power p out , output power (dbm) p3db = 57.22 dbm (52.76 w) p6db = 47.77 dbm (59.84 w) 50 51 52 53 15 16 17 18 19 v dd = 28 vdc, i dq1 = 90 ma, i dq2 = 420 ma pulsed cw, 12 sec(on), 1% duty cycle f = 2140 mhz 20 135 ma 112.5 ma 630 ma 135 ma 525 ma 90 ma 21 43 20 38 5 v dd = 28 vdc i dq1 = 90 ma i dq2 = 420 ma f = 2140 mhz t c = ?30 c 25 c 85 c ?30 c 10 1 32 30 28 30 20 10 p out , output power (watts) cw figure 14. power gain and power added efficiency versus cw output power g ps , power gain (db) pae, power added efficiency (%) g ps 36 34 100 50 40 pae 25 c 85 c 26 24 22 45 35 25 15
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 9 rf device data freescale semiconductor typical characteristics p out , output power (watts) cw figure 15. power gain versus output power 28 v 32 v 80 32 060 25 10 g ps , power gain (db) 29 40 v dd = 24 v 28 30 i dq1 = 90 ma i dq2 = 420 ma f = 2140 mhz 27 26 31 20 30 50 70 2220 26 36 2060 t c = ?30 c 25 c 34 32 30 f, frequency (mhz) figure 16. power gain versus frequency g ps , power gain (db) i dq1 = 90 ma i dq2 = 420 ma p out = 15 w 2100 2140 2180 2080 2120 2160 2200 85 c 28 250 10 9 90 t j , junction temperature ( c) figure 17. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 4 w avg., and pae = 14%. mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 2nd stage 1st stage 10 6
10 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 18. ccdf w - cdma 3gpp, test model 1, 64 dpch, 50% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. par = 7.5 db @ 0.01% probability on ccdf input signal compressed output signal @ 4 w p out ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 19. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw ?acpr in 3.84 mhz integrated bw
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 11 rf device data freescale semiconductor z o = 50 z in z load f = 2220 mhz f = 2060 mhz f = 2060 mhz f = 2220 mhz v dd = 28 vdc, i dq1 = 90 ma, i dq2 = 420 ma, p out = 4 w avg. f mhz z in z load 2060 48.171 + j6.940 6.868 - j9.687 2080 52.454 + j11.553 6.432 - j8.942 2100 55.468 + j8.729 6.051 - j8.216 2120 56.312 + j12.000 5.729 - j7.545 2140 58.860 + j9.463 5.444 - j6.869 2160 57.596 + j11.427 5.193 - j6.201 2180 59.603 + j10.690 4.958 - j5.578 2200 56.867 + j10.012 4.743 - j4.969 2220 58.144 + j9.805 4.577 - j4.353 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. series equivalent input and load impedance z in z load device under test output matching network
12 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 table 7. common source s - parameters (v dd = 28 v, i dq1 = 90 ma, i dq2 = 420 ma, t c = 25 c, 50 ohm system) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1500 0.452 134 0.356 7.81 0.001 - 108 0.979 160 1550 0.407 117 0.757 - 7.8 0.000 - 67.7 0.969 157 1600 0.354 96.5 1.430 -31 0.000 - 65.8 0.955 154 1650 0.316 85.1 2.330 - 52.1 0.001 - 27.1 0.935 151 1700 0.279 68 3.690 - 73.6 0.001 - 43.4 0.909 148 1750 0.222 49.5 5.800 - 93.3 0.002 - 21.9 0.878 143 1800 0.140 30.4 9.570 -113 0.003 - 24.8 0.833 137 1850 0.046 21.9 17.000 - 137 0.004 - 33.7 0.737 124 1900 0.094 135 33.600 - 173 0.007 - 41.8 0.476 91.7 1950 0.238 56.4 58.300 124 0.009 - 86.4 0.396 - 79.7 2000 0.254 - 29.2 47.800 59.5 0.006 -118 0.873 - 149 2050 0.241 - 84.1 34.300 22.9 0.004 - 122 0.927 - 171 2100 0.252 - 120 27.700 - 3.98 0.004 - 125 0.911 - 179 2150 0.201 - 142 23.900 - 28.2 0.003 - 128 0.891 177 2200 0.174 - 162 21.100 - 51.8 0.003 - 130 0.878 175 2250 0.148 168 18.800 - 75.9 0.003 - 131 0.872 175 2300 0.135 103 15.800 - 100 0.003 - 139 0.882 175 2350 0.197 35.4 12.600 -118 0.003 - 155 0.906 174 2400 0.244 1.73 11.100 - 132 0.002 - 156 0.919 173 2450 0.291 - 11.1 10.400 - 147 0.002 - 157 0.926 171 2500 0.340 -19 9.750 - 163 0.002 - 147 0.933 170 2550 0.391 - 26.9 9.230 - 179 0.001 - 150 0.938 169 2600 0.435 - 35.2 8.760 164 0.001 - 144 0.942 168 2650 0.475 - 44.4 8.290 146 0.001 - 137 0.945 166 2700 0.455 -46 7.050 129 0.001 - 90.2 0.950 166 2750 0.535 - 60.2 6.690 112 0.001 - 106 0.955 164 2800 0.571 - 71.2 5.980 95.1 0.001 - 103 0.955 163 2850 0.598 -82 5.170 78.5 0.002 - 96.5 0.954 162 2900 0.623 - 92.9 4.370 63.1 0.002 - 103 0.955 162 2950 0.643 - 102 3.690 48.7 0.002 - 96.2 0.954 161 3000 0.668 - 109 3.100 35.4 0.002 - 106 0.951 161 3050 0.681 -116 2.580 22.7 0.002 - 107 0.952 161 3100 0.694 - 121 2.130 11 0.002 - 87.9 0.957 160 3150 0.712 - 124 1.760 - 0.057 0.002 - 96.1 0.959 160 3200 0.724 - 127 1.440 - 10.9 0.002 - 99.6 0.959 160 3250 0.726 - 130 1.170 - 21.1 0.002 - 82.4 0.962 159 3300 0.705 - 130 0.928 - 28.7 0.003 - 66.9 0.963 159 3350 0.743 - 132 0.780 -37 0.003 - 77.2 0.959 158 3400 0.748 - 135 0.652 - 44.3 0.003 -88 0.955 157 3450 0.753 - 137 0.555 - 50.3 0.003 - 78.6 0.955 156
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 13 rf device data freescale semiconductor table 7. common source s - parameters (v dd = 28 v, i dq1 = 90 ma, i dq2 = 420 ma, t c = 25 c, 50 ohm system) (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 3500 0.759 - 140 0.486 - 56.1 0.004 - 81.1 0.954 155 3550 0.765 - 144 0.440 - 62.4 0.004 -82 0.946 154 3600 0.770 - 148 0.401 - 69.7 0.004 - 85.9 0.941 153 3650 0.774 - 153 0.370 - 77.4 0.005 - 96.4 0.941 151 3700 0.780 - 159 0.338 - 85.1 0.006 - 94.9 0.940 150 3750 0.795 - 164 0.306 - 93.2 0.006 - 99.3 0.933 148 3800 0.810 - 170 0.273 - 101 0.008 -110 0.928 146 3850 0.821 - 175 0.239 - 107 0.008 -113 0.934 145 3900 0.839 - 178 0.207 -111 0.008 -112 0.936 144 3950 0.855 179 0.178 -114 0.008 -117 0.927 144 4000 0.862 176 0.156 -116 0.008 - 123 0.935 144
14 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 package dimensions
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22 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1
mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 23 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1949: mounting method for the mhvic910hr2 (pfp - 16) and similar surface mount packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 nov. 2007 ? initial release of data sheet
24 rf device data freescale semiconductor mw7ic2240nr1 mw7ic2240gnr1 mw7ic2240nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic2240n rev. 0, 11/2007

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